|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SGP15N60RUF September 2000 IGBT SGP15N60RUF Short Circuit Rated IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is required. Features * * * * Short Circuit rated 10us @ TC = 100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 15A High Input Impedance Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C G GCE TO-220 TC = 25C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) TSC PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C SGP15N60RUF 600 20 24 15 45 10 160 64 -55 to +150 -55 to +150 300 Units V V A A A us W W C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.77 62.5 Units C/W C/W (c)2000 Fairchild Semiconductor International SGP15N60RUF Rev. A SGP15N60RUF Electrical Characteristics of IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 24A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---948 101 33 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----17 33 44 118 320 356 676 20 34 48 212 340 695 1035 -42 7 17 7.5 --65 200 --950 --70 350 --1450 -60 10 24 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH VCC = 300 V, IC = 15A, RG = 13, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 15A, RG = 13, VGE = 15V, Inductive Load, TC = 125C @ TC = VCC = 300 V, VGE = 15V 100C VCE = 300 V, IC = 15A, VGE = 15V Measured 5mm from PKG (c)2000 Fairchild Semiconductor International SGP15N60RUF Rev. A SGP15N60RUF 50 45 40 Common Emitter T C = 25 20V 45 15V 12V 40 Common Emitter VGE = 15V TC = 25 TC = 125 ------ Collector Current, IC [A] 8 35 30 25 20 15 10 5 0 Collector Current, IC [A] 35 30 25 20 15 10 5 0 0 2 4 6 VGE = 10V 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 24 Common Emitter V GE = 15V Collector - Emitter Voltage, VCE [V] V CC = 300V Load Current : peak of square wave 3.5 30A 20 3.0 Load Current [A] 16 2.5 15A 2.0 IC = 8A 1.5 12 8 4 1.0 -50 0 50 100 150 0 Duty cycle : 50% T C = 100 Power Dissipation = 25W 0.1 1 10 100 1000 Case Temperature, T C [] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter TC = 25 20 Common Emitter T C = 125 16 Collector - Emitter Voltage, V CE [V] 16 12 Collector - Emitter Voltage, V CE [V] 12 8 8 30A 4 IC = 7A 0 15A 30A 4 IC = 7A 0 0 4 8 12 16 20 15A 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE (c)2000 Fairchild Semiconductor International Fig 6. Saturation Voltage vs. VGE SGP15N60RUF Rev. A SGP15N60RUF 1800 1500 Common Emitter VGE = 0V, f = 1MHz TC = 25 Cies Capacitance [pF] Common Emitter V CC = 300V, V GE = 15V IC = 15A T C = 25 T C = 125 ------ Ton 1200 Switching Time [ns] 100 Tr 900 Coes 600 Cres 300 0 1 10 10 1 10 100 Collector - Emitter Voltage, VCE [V] Gate Resistance, R G [] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time [ns] Common Emitter V CC = 300V, VGE = 15V IC = 15A T C = 25 T C = 125 ------ Common Emitter V CC = 300V, VGE = 15V IC = 15A T C = 25 T C = 125 ------ Switching Loss [uJ] Toff 1000 Eoff Eon Eoff Toff Tf Tf 100 100 1 10 100 1 10 100 Gate Resistance, R G [ ] Gate Resistance, RG [ ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = 15V, RG = 13 T C = 25 T C = 125 -----Common Emitter V GE = 15V, RG = 13 T C = 25 T C = 125 ------ Switching Time [ns] Ton 100 Switching Time [ns] Tr Toff Tf Toff 100 Tf 10 5 10 15 20 25 30 5 10 15 20 25 30 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2000 Fairchild Semiconductor International Fig 12. Turn-Off Characteristics vs. Collector Current SGP15N60RUF Rev. A SGP15N60RUF 15 Common Emitter V GE = 15V, RG = 13 T C = 25 T C = 125 ------ Gate - Emitter Voltage, VGE [ V ] 12 Common Emitter R L = 20 T C = 25 VCC = 100 V 300 V Switching Loss [uJ] Eoff 1000 Eoff 9 200 V 6 Eon 3 100 5 10 15 20 25 30 0 0 10 20 30 40 50 Collector Current, IC [A] Gate Charge, Q g [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 IC MAX. (Pulsed) 50us 100us 1 100 Collector Current, I C [A] 10 DC Operation Collector Current, IC [A] IC MAX. (Continuous) 10 1 Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 Safe Operating Area VGE = 20V, TC = 100 1 1 10 100 1000 0.1 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [/W] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm t1 single pulse 1E-3 10 -5 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2000 Fairchild Semiconductor International SGP15N60RUF Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. F1 |
Price & Availability of SGP15N60RUF |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |